2008. 8. 11 1/3 semiconductor technical data KTK5164U revision no : 0 ultra-high speed switching applications analog switch applications features ? 2.5 gate drive. ? low threshold voltage : v th =0.5 ?- 1.5v. ? high speed. ? small package. ? enhancement-mode. maximum ratings (ta=25 ? ) dim millimeters a b d e 1. source 2. gate 3. drain usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m0.4 2 0.10 n0 .10 min + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) type name marking lot no. kf n channel mos field effect transistor d g s this transistor is electrostatic sensitive device. please handle with caution. equivalent circuit characteristic symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gss ?? 20 v dc drain current i d 200 ma drain power dissipation p d 100 mw channel temperature t ch 150 ? storage temperature range t stg -55 ?- 150 ? characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = ?? 16v, v ds =0v - - ?? 1 a drain-source breakdown voltage v (br)dss i d =100 a, v gs =0v 60 - - v drain cut-off current i dss v ds =60v, v gs =0v - - 1 a gate threshold voltage v th v ds =10v, i d =1ma 0.5 - 1.5 v forward transfer admittance |y fs | v ds =10v, i d =50ma 100 - - ms drain-source on resistance r ds(on) i d =50ma, v gs =2.5v - 1.5 2 ? input capacitance c iss v ds =10v, v gs =0v, f=1mhz - 55 65 pf reverse transfer capacitance c rss v ds =10v, v gs =0v, f=1mhz - 13 18 pf output capacitance c oss v ds =10v, v gs =0v, f=1mhz - 40 50 pf switching time rise time t r out (z =50 ? ) r v :t , t < 5ns d.u. 1% v = 30v 10 s 10v 0 l v 50 ? in v r i =100ma d out in dd = < f - 8 - ns turn-on time t on - 14 - fall time t f - 35 - turn-off time t off - 75 -
2008. 8. 11 2/3 KTK5164U revision no : 0 drain-source voltage v (v) drain current i (ma) d 0 ds 0 i - v dds drain current i (ma) forward transfer admittance 1 10 d y - i gate-source voltage v (v) drain current i (ma) d ds (low voltage region) common source ta=25 c v =1.4v gs v =1.4v gs 0 0 0.4 ta=25 c common source fs d fs y (ms) 10 100 100 1k common source v =10v common source v =10v ds ds 48 20 12 16 40 80 120 160 200 1.6v 1.8v 2.0v 2.2v 2.2v 2.0v 1.8v 1.6v 0.8 1.2 1.6 2.0 40 80 120 160 200 i - v ds d drain current i (ma) gate-source votage v (v) gs d i - v dgs drain-source on voltage v (mv) drain current i (ma) d ds(on) v - i ds(on) d ta=25 c capacitance c (pf) drain-source voltage v (v) ds c - v ds ta=25 c 5 10 30 50 300 100 v =0 f=1mhz ta=25 c gs common source c iss c oss rss c v =0 f=1mhz ta=25 c gs common source 300 10 30 50 100 0.1 12345 1 10 100 0.1 0.3 0.5 13510 50 30 3 5 10 30 50 100 300 500
2008. 8. 11 3/3 KTK5164U revision no : 0 switching time t (ns) drain current i (ma) d d t - i common source p - ta d ambient temperature ta ( c) 02040 50 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 100 150 200 250 300 d.u. 1% < = v :t , t < 5ns in rf (z =50 ? ) out ta=25 c i v 10v 0 10 s v r out d v in l 50 ? dd off f t on t r t 0.05 0.3 0.1 0.5 0.03 0.01 t 1 0.3 3 10 30 100 300 1k dr drain reverse current i (a) drain-source votage v (v) ds ds dr i - v 0 0.01 0.1 1 0.03 0.3 2 -0.2 -0.4 -0.6 -1.2 -1.0 -0.8 common source v =0 gs ta=25 c d i s g dr
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